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Advanced Ta-Based Diffusion Barriers for Cu Interconnec - Paperback NEW Hubner,
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Item specifics
- Condition
- Weight
- 214grams
- Subjects
- Nonfiction, Technology & Engineering, Electronics,
- Pages
- 102
- Size
- 15.3 x 22.7 x 0.8 centimetres (0
- Subject
- Engineering
- Book Title
- Advanced Ta-Based Diffusion Barriers for Cu Interconnects. Ren H
- Publication Date
- 10/09/2008
- ISBN
- 9781604564518
- Publication Year
- 2009
- Type
- Textbook
- Format
- Paperback
- Subject Area
- Material Science
- Language
- English
- Publication Name
- Advanced Ta-Based Diffusion Barriers for Cu Interconnects
- Item Height
- 155mm
- Publisher
- NOVA Science Publishers INC International Concepts
- Item Width
- 230mm
- Item Weight
- 184g
- Number of Pages
- 102 Pages
About this product
Product Information
During the last few years, copper has become the standard metallisation material for on-chip interconnects in high-performance microprocessors. Compared to the previously used aluminium, copper shows not only a lower resistivity, but also significantly improved electromigration resistance. Copper ions, however, are very mobile in silicon and many dielectric materials under electrical and thermal bias. Thus, barrier layers are needed to prevent Cu diffusion into the insulating layers surrounding the metallic interconnects. Since Ta-based compounds are characterized by a high thermal stability, pure Ta films or layer stacks consisting of Ta and TaN are used for such barriers. The continuous scaling down of the interconnect dimensions and, therefore, the essential decrease in the barrier layer thickness coupled with the replacement of silicon oxide by advanced low-k dielectrics demand further improvements of the diffusion barrier performance. It is the aim of this book to carry out microstructure and functional property investigations for advanced, high-performance Tabased diffusion barriers (Ta-TaN layer stacks and Ta-Si-N single layers) before and after annealing to compare their thermal stabilities and to probe the corresponding failure mechanisms. For the Ta-TaN barriers, these studies are undertaken for a range of layer sequences, while for the Ta-Si-N barriers a variety of films with different chemical compositions are analysed.
Product Identifiers
Publisher
NOVA Science Publishers INC International Concepts
ISBN-13
9781604564518
eBay Product ID (ePID)
91858971
Product Key Features
Subject Area
Material Science
Publication Name
Advanced Ta-Based Diffusion Barriers for Cu Interconnects
Format
Paperback
Language
English
Publication Year
2009
Type
Textbook
Number of Pages
102 Pages
Dimensions
Item Height
155mm
Item Width
230mm
Item Weight
184g
Additional Product Features
Country/Region of Manufacture
United States
Item description from the seller
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Charlies Chapters Ltd
Charles Sword
81 Balmoral Drive
SOUTHPORT
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