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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metalli

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Last updated on 19 May, 2024 11:39:15 BSTView all revisionsView all revisions

Item specifics

Condition
New: A new, unread, unused book in perfect condition with no missing or damaged pages. See the ...
ISBN-13
9783319882840
Type
NA
Publication Name
NA
ISBN
9783319882840
Book Title
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
Item Length
6.2in
Publisher
Springer International Publishing A&G
Publication Year
2018
Format
Trade Paperback
Language
English
Item Height
0.4in
Author
Maria Angela Pampillon Arce
Genre
Technology & Engineering, Science
Topic
Nanoscience, Physics / Condensed Matter, Nanotechnology & Mems, Electronics / Transistors
Item Width
9.2in
Item Weight
103.5 Oz
Number of Pages
Xxiii, 164 Pages

About this product

Product Information

This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallicGd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint.

Product Identifiers

Publisher
Springer International Publishing A&G
ISBN-10
3319882848
ISBN-13
9783319882840
eBay Product ID (ePID)
6038921437

Product Key Features

Book Title
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
Author
Maria Angela Pampillon Arce
Format
Trade Paperback
Language
English
Topic
Nanoscience, Physics / Condensed Matter, Nanotechnology & Mems, Electronics / Transistors
Publication Year
2018
Genre
Technology & Engineering, Science
Number of Pages
Xxiii, 164 Pages

Dimensions

Item Length
6.2in
Item Height
0.4in
Item Width
9.2in
Item Weight
103.5 Oz

Additional Product Features

Number of Volumes
1 Vol.
Lc Classification Number
Qc173.458.S87
Table of Content
Introduction.- Fabrication Techniques.- Characterization Techniques.- Thermal Oxidation of Gd2o3.- Plasma Oxidation of Gd2o3 and Sc2o3.- Gadolinium Scandate.- Interface Scavenging.- Gd2o3 on Inp Substrates.- Conclusions and Future Work.
Copyright Date
2017
Intended Audience
Trade
Series
Springer Theses Ser.
Illustrated
Yes

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Premier Books LLC
David Taylor
26C Trolley Sq
19806-3356 Wilmington, DE
United States
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